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CdSxSe1-x films were deposited by the slurry coated from aqueous precursors. X-ray diffraction patterns of the films indicated polycrystalline structure with hexagonal phase.XPS spectra indicated the peaks corresponding to Cd (3d5/2 and 3d3/2), Se (3d5/2 and 3d3/2) and S (3d5/2 and 3d3/2) levels. The resistivity of the films varies from 30 ohm cm to 480 ohm cm as the sulphur content increased. The electrical properties of the CdSxSe1-x film were examined by resistivity, carrier density and mobility using Van der Pauw method. Photoelectrochemical (PEC) properties of these CdS0.6Se0.4 thin films were studied. Mott-Schottky studies indicated that the films exhibit n-type behaviour

Author(s): S. Vadivel1, M. Vimalan2, J. Madhavan3, A. Cyrac Peter4

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