High-temperature annealing for improved crystalline quality of semipolar AlN on m-plane sapphire

Masafumi Jo; Hideki Hirayama

doi:10.21767/2349-3917-C1-003

High-temperature annealing for improved crystalline quality of semipolar AlN on m-plane sapphire

EuroSciCon Joint Event on Laser Optics & Photonics and Atomic & Plasma Science
July 16-17, 2018 Prague , Czech republic

Masafumi Jo, Hideki Hirayama

RIKEN, Japan

Posters & Accepted Abstracts: Am J Compt Sci Inform Technol

DOI: 10.21767/2349-3917-C1-003

Abstract

AlGaN light-emitting diodes (LEDs) have been studied for highly efficient light sources in deep ultraviolet (DUV) range. In widely used c-plane AlGaN, the spontaneous and piezoelectric polarization produces a strong electric field along the growth direction, which degrades the performance of the LEDs. To overcome the polarization problem, growth on semipolar/nonpolar substrates has been carried out extensively. However, expected properties have not been clearly observed for AlGaN alloy in DUV range because of the low crystalline quality. Here, we report the improved crystalline quality of semipolar AlN grown on m-plane sapphire by using a high-temperature annealing process.