Photoelectrochemical studies of zirconium dichalcogenide thin films

The present work is to study and develop the low cost high efficiency devices using zirconium dichalcogenide thin films; photoelectrochemical studies on these materials are found to be very rare. This article is an account of the photoelectrochemical investigations of zirconium disulphide (ZrS2), zirconium diselenide (ZrSe2), thin films. Fabrication of photoelectrochemical cell using zirconium dichalcogenide thin film photoelectrode is very simple, cheap, and convenient. The various cells structures were formed for ZrS2, ZrSe2 thin films. The photoelectrochemical behavior of these cells has been examined. The highest fill factor 17 % and conversion efficiency 0.004% is obtained for ZrS2 films and fill factor for ZrSe2 is 30 % and conversion efficiency 0.038% Because densely-packed compact layered films can provide the faster conduction pathway

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