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Journal of Organic & Inorganic Chemistry
ISSN 2472-1123
2
n d
E d i t i o n o f E u r o S c i C o n C o n f e r e n c e o n
Chemistry
F e b r u a r y 1 9 - 2 0 , 2 0 1 9
P r a g u e , C z e c h R e p u b l i c
Chemistry 2019
C
ontrolled thin film coating opens up a promising pathway for band gap engineering and designing the interface mediated
defect levels generation, with significant tuneability, which leads to achieving enhanced performance of a given semiconductor
in terms of their opto-electronic and electrochemical properties. For e.g., controlled growth of epitaxial graphene (EG) layers
on silicon carbide (SiC) provides a novel way of tuning photocatalytic activity and bandgap narrowing in EG/SiC, yielding high
efficiency photocatalyst. Results show that the quality and quantity of EG and heterojunction interface layer between EG and SiC,
play a crucial role in band gap narrowing, and substantial enhancement of photocatalytic activity in EG/SiC systems. Second
example is the atomic layer deposition (ALD) grown ZnO thin films (about 2 nm to 70 nm) on different templates including thin
polymeric templates, which formulate a mechanism to achieve significant tunable changes in deep level emission (DLE) of ZnO
from green to violet emission range, and in the ratio of DLE to near band edge emission (NBE) from about 0 to 100. The wide range
notable variation of photoluminescence and UV-Vis absorption spectra of ZnO are discussed in reference to its potential use as a
transparent conducting oxide material and prospective application in ultraviolet light-emitting diodes and solar cell.
sudeshna@iiti.ac.inEffect of surface and interfaces: band gap
engineering to achieve high efficiency functional
materials and its tunability
Sudeshna Chattopadhyay
MEMS, BSBE-IIT Indore, India
J Org Inorg Chem 2019, Volume: 5
DOI: 10.21767/2472-1123-C1-021