Dr. Boris G Vainer

Dr. Boris G Vainer
Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University, Russia


o Doctor of Physical and Mathematical Sciences, received July 2010; thesis title: Multichannel Spectrometry and FPA-Based Infrared Thermography Developed Using Indium Arsenide Photosensitive CID MIS-Structures; defense on 2009 in the Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences. o Dr., Ph.D. in physics and mathematics, received August 1985; thesis title: Indium Antimonide MIS Structures at High Electric Field; defense on 1985 in the Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences.

Research Interest

? Application of quantitative infrared thermography and thermal imaging to different spheres ? Biomedical infrared thermography ? Human and animal physiology ? Multichannel (line-array and FPA) infrared detectors ? Quantitative analysis of thermograms ? etc.


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