|Joung Real Ahn
Professor, Department of Physics, Sungkyunkwan University, South Korea.
|March 1997 - August 2000: Ph. D, Department of Physics, Pohang University of Science and Technology March 1995 - February 1997: M. S, Department of Physics, Pohang, University of Science and Technology March 1991 - February 1995: B. S, Department of Physics, Sungkyunkwan University March 2016 - Present: Professor, Department of Physics, Sungkyunkwan University March 2010 - 2016: Associate Professor, Department of Physics, Sungkyunkwan University January 2006 - February 2010: Assistant Professor, Department of Physics, Sungkyunkwan University September 2005 - December 2005: Research Assistant Professor, Department of Physics and CNNC, Sungkyunkwan University September 2003 - August 2005: Research Assistant Professor, Center for Atomic Wires and Layers (CRi), Yonsei University March 2002 - August 2003: Post?doc, Atomic?Scale Surface Science Research Center (SRC), Yonsei University October 2000 - November 2001: Post?doc, Department of Physics and Department of Chemistry, University of California at Irvine Prof. Ahn published 67 papers including. He has extensive experience in photoemission experiments including angle-resolved photoemission spectroscopy and x-ray photoemission spectroscopy, and in diffraction experiments including x-ray diffraction and low energy electron diffraction. He is well known in this research field, and has published numerous papers in world-leading journals, including Science (2014), Nano Letters (2015), ACS Nano (2014, 2013), Journal of American Chemical society (2006), and Physical Review Letters (2005, 2004, 2003, 2002, 2000).|
|Self-assembled Si nanowire, Epitaxial graphene Scanning Tunneling Microscopy, Photoemission Spectroscopy, First Principles Calculations. ). His research experience includes a wide range of materials including 1D, 2D, and 3D atomic materials, and research fields including physics, materials science, and chemistry. In particular, he recently achieved a break-through in materials science based on spectroscopy and the diffraction experiments: wafer-scale single-crystal growth of graphene, three-dimensional carbon architecture , and direct observation of one-dimensional semiconductor wire with size < 1 nm.|
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